Narrow Band Flat Fields And Qe

Figure 2 shows predicted spectral response (at -100°C) for such an optimised CCD, compared to that expected for a device with a single layer coating. Note that this data applies to a deep depletion CCD.

Spectral Response-optimised coating compared to single coating

1 1

-—------

/

/

-asiro-BB aa

(single AR)

AR

-'

-1-

-

-(-

-1-

300 400 500 eoo 700 B00 900 1000 1100

wavelength (nm)

300 400 500 eoo 700 B00 900 1000 1100

wavelength (nm)

Figure 2. Predicted spectral response for optimized coating, compared to single coating.

For the standard silicon device narrow band (10 nm bandwidth) flat field frames were recorded at -100°C for three wavelengths. The 300 nm and 650 nm plots include some row-averaging to improve signal/noise. Figure 3 shows spectral response at different chip locations. As expected, peak quantum efficiency varies along the long axis of the chip, where the reflection has been minimised. At 300 nm a second smaller maximum occurs at ~3* (lambda/4).

Figure 3. 300nm, 650nm, 900nm flat fields and column (long-axis) profiles.

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